Accelerated Lifetime Testing and Analysis of Delta-Doped Silicon Test Structures

نویسندگان

چکیده

As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new fabrication routes capable of creating 2D patterns highly doped phosphorus layers precision has implications future digital electronics. This work establishes accelerated lifetime tests such layers, showing that these materials survive high current (>3.0 MA/cm 2 ) 300°C greater than 70 days are still electrically conductive. The compare well failures in traditional metal like aluminum copper where mean time failure at temperatures densities would occur within hours. It also more stable features, paving way toward their integration operational CMOS.

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ژورنال

عنوان ژورنال: IEEE Transactions on Device and Materials Reliability

سال: 2022

ISSN: ['1558-2574', '1530-4388']

DOI: https://doi.org/10.1109/tdmr.2022.3152376